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Silicon Carbide & Gallium Nitride Power Semiconductors – World – 2010
Published: 22 January 2010

Price: £3700 / $6290 / €4630

The report provides an in-depth global assessment on the SiC & GaN power semiconductor market. The report is designed to provide users with the likely developments and penetration rates for SiC & GaN power semiconductors in key applications. The report also contains an end-user survey with CTOs and chief engineers within the largest companies who will choose whether these new device technologies are used.

Some of the key findings are:

  • The SiC & GaN power semiconductor market is not anticipated to make a substantial impact onto the power semiconductor industry until 2013, projected to be worth over $150 million.
  • The market for SiC & GaN power devices is forecast to reach $2.8 billion by 2019.
  • Hybrid and electric vehicles hold the greatest revenue opportunity for SiC power devices
  • 57% of OEMs surveyed said they are already or would be using SiC in their designs.
Feature of this report include:
  • SiC & GaN power device market sizes for 2009 with conservative, mid-case and optimistic case forecasts to 2019.
  • Detailed revenue, unit shipment and average selling price analysis for both SiC & GaN power devices.
  • SiC & GaN power device forecast by key applications, with penetration rates for each product type.
  • SiC & GaN power device pricing points from 2009 to 2019, collected from power semiconductor suppliers and end users.
  • Comprehensive end-user survey, containing key findings from over 30 hours of consultation.
 

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Associated Press releases
When will SiC & GaN Power Devices Become a Big Deal?
09 February 2010
At the close of 2009, Silicon Carbide (SiC) & Gallium Nitride (GaN) power devices were estimated to account for less than 0.2% of the total $11 billion power semiconductor market according to a recently released report from IMS Research. ... details >>